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Development of graphite crucible semiconductor silicon carbide single crystal materialAdd time:2018/01/31
  Abstract: This paper reviews the development history of semiconductor silicon carbide (SiC) single crystal materials, introduces the structure and properties of SiC single crystal semiconductor materials, the physical vapor transport method (PVT) preparation of SiC crystal is described, described in detail in SiC single crystal and multi type microtubules and small angle boundaries and other important defects. At the same time, the development trend of SiC single crystal materials are discussed.
  Keywords: semiconductor; SiC single crystal; physical gas transmission method; defect;
  1 Introduction
  The rapid development of the first and second generation semiconductor materials, represented by silicon (Si) and gallium arsenide (GaAs), has promoted the rapid development of microelectronics and optoelectronic technology. However, the devices made of these semiconductor materials can only work in the environment below 200 degrees, which can not meet the requirements of modern electronic technology for high temperature, high frequency, high voltage and radiation protection devices. As a representative of the third generation wide band gap semiconductor material, silicon carbide (SiC) single crystal material has a large band gap (~Si 3 times), high thermal conductivity (10 times 3.3 times ~Si or GaAs), high saturated electron transfer rate (~Si 2.5 times) and high breakdown electric field (5 times 10 times ~Si the properties such as [1-2] or GaAs), as shown in table 1. The SiC device has the irreplaceable advantages of [3-7] in high temperature and high pressure, high frequency and high power electronic devices and the field of aerospace, military, nuclear and other extreme environment applications, to make up for the defects of the traditional semiconductor materials and devices in practical application, it has gradually become the mainstream of power semiconductors.
  Abstract: This paper reviews the development history of semiconductor silicon carbide (SiC) single crystal materials, introduces the structure and properties of SiC single crystal semiconductor materials, the physical vapor transport method (PVT) preparation of SiC crystal is described, described in detail in SiC single crystal and multi type microtubules and small angle boundaries and other important defects. At the same time, the development trend of SiC single crystal materials are discussed.
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